Product Datasheet Search Results:
4 Pages, 29 KB, Original- VN0120N3
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS FET
Product Details Search Results:
Supertex.com/VN0120N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE...
1808 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1516 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P003
{"Terminal Form":"WIRE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-W3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Moun...
1478 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 21:58:35, 17 November 2024
Supertex.com/VN0120N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"15 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"200 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 21:58:35, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFK120N30P3.pdf | 0.14 | 1 | Request | |
| IXGH120N30B3.pdf | 0.09 | 1 | Request | |
| IXFK120N30T.pdf | 0.08 | 1 | Request | |
| IXFT120N30X3HV.pdf | 0.15 | 1 | Request | |
| IXFX120N30T.pdf | 0.08 | 1 | Request | |
| IXFH120N30X3.pdf | 0.15 | 1 | Request | |
| IXGH120N30C3.pdf | 0.09 | 1 | Request | |
| IXFX120N30P3.pdf | 0.14 | 1 | Request | |
| IXGH120N30B3.pdf | 0.16 | 1 | Request | |
| IXFK120N30T.pdf | 0.14 | 1 | Request | |
| IXFX120N30T.pdf | 0.14 | 1 | Request | |
| IXGH120N30C3.pdf | 0.11 | 1 | Request |
