Product Datasheet Search Results:
9 Pages, 290 KB, Original- TSM1N80SCTB0
- Taiwan Semiconductor Co., Ltd.
- 0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
Product Details Search Results:
Taiwansemi.com/TSM1N80SCTB0
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"1 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"90 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transist...
1489 Bytes - 17:10:44, 14 March 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| 4GAAACTB01I1000.pdf | 0.04 | 1 | Request | |
| 4GAAACTB00I1L3X.pdf | 0.04 | 1 | Request | |
| 4GAAACTB01I100X.pdf | 0.04 | 1 | Request | |
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| 4GAAACTB0100000.pdf | 0.04 | 1 | Request | |
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| 4GAAACTB0000L30.pdf | 0.04 | 1 | Request |
