Product Datasheet Search Results:

TSM1N45CWRP.pdf9 Pages, 464 KB, Original
TSM1N45CWRP
Taiwan Semiconductor Co., Ltd.
0.5 A, 450 V, 4.25 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Taiwansemi.com/TSM1N45CWRP
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"108 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"450 V","...
1520 Bytes - 08:43:17, 24 November 2024

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