Product Datasheet Search Results:
8 Pages, 459 KB, Original- TSM12N65CIC0
- Taiwan Semiconductor Co., Ltd.
- 12 A, 650 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Taiwansemi.com/TSM12N65CIC0
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"273 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V"...
1524 Bytes - 06:24:10, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 4GAACCIC0000000.pdf | 0.04 | 1 | Request | |
| 4GAACCIC03I1L30.pdf | 0.04 | 1 | Request | |
| 4GAACIC000I1L3X.pdf | 0.06 | 1 | Request | |
| 4GAACIC003I1L3X.pdf | 0.06 | 1 | Request | |
| 4GAACIC00000L30.pdf | 0.04 | 1 | Request | |
| 4GAACCIC0300000.pdf | 0.04 | 1 | Request | |
| 4GAACCIC030000X.pdf | 0.04 | 1 | Request | |
| 4GAACCIC03I1000.pdf | 0.04 | 1 | Request | |
| 4GAACIC01200000.pdf | 0.04 | 1 | Request | |
| 4GAACIC003I1L30.pdf | 0.04 | 1 | Request | |
| 4GAACIC00000L3X.pdf | 0.04 | 1 | Request | |
| 4GAACCIC00I1L3X.pdf | 0.04 | 1 | Request |
