Product Datasheet Search Results:
9 Pages, 234 KB, Original- TPCA8081
- Toshiba America Electronic Components, Inc.
- 38 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/TPCA8081
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"187 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"114 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor ...
1512 Bytes - 01:37:57, 18 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TPCA8081.pdf | 0.23 | 1 | Request |
