Product Details Search Results:
Toshiba.co.jp/TPCA8042
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"263 mJ","Package Shape":"SQUARE","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0057 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"135 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transi...
1520 Bytes - 11:46:10, 26 March 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TPCA8042.pdf | 0.15 | 1 | Request |
