Product Datasheet Search Results:
9 Pages, 246 KB, Original- TK10A60D5
- Toshiba America Electronic Components, Inc.
- 10 A, 600 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 12 KB, Original- TK10A60D5(Q)
- Toshiba
- SILICON N CHANNEL MOS TYPE (PAI-MOS)
Product Details Search Results:
Toshiba.co.jp/TK10A60D5
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"364 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.05 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","...
1548 Bytes - 12:34:20, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TK10A60D.pdf | 0.18 | 1 | Request |
