Product Datasheet Search Results:
4 Pages, 455 KB, Original- TIM5964-60SL
- Toshiba America Electronic Components, Inc.
- C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
2 Pages, 22 KB, Original- TIM5964-60SL-251
- Toshiba America Electronic Components, Inc.
- C BAND, Si, N-CHANNEL, RF POWER, JFET
4 Pages, 126 KB, Original- TIM5964-60SL-422
- Toshiba America Electronic Components, Inc.
- C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Toshiba.co.jp/TIM5964-60SL
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case ...
1519 Bytes - 03:30:21, 26 November 2024
Toshiba.co.jp/TIM5964-60SL-251
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"2-16G1B, 2 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Highest Frequency Band":"C BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminal...
1346 Bytes - 03:30:21, 26 November 2024
Toshiba.co.jp/TIM5964-60SL-422
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"15 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case ...
1538 Bytes - 03:30:21, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TIM500GDM33-PSA011.pdf | 0.67 | 1 | Request |
