Product Datasheet Search Results:

TIM1414-7.pdf4 Pages, 338 KB, Original
TIM1414-7-252.pdf4 Pages, 337 KB, Original
TIM1414-7-253.pdf1 Pages, 58 KB, Scan
TIM1414-7-252.pdf4 Pages, 123 KB, Scan
TIM1414-7-252
Toshiba
FET Transistor, Power GaAs FET

Product Details Search Results:

Toshiba.co.jp/TIM1414-7
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"5.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HERME...
1444 Bytes - 05:32:16, 26 November 2024
Toshiba.co.jp/TIM1414-7-252
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"15 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"2-9D1B, ...
1447 Bytes - 05:32:16, 26 November 2024

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