Product Datasheet Search Results:
8 Pages, 73 KB, Original- STSJ2NM60
- Stmicroelectronics, Inc.
- 0.37 A, 600 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
St.com/STSJ2NM60
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3700 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transist...
1470 Bytes - 08:43:55, 14 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| C30CNM60A02A0.pdf | 0.04 | 1 | Request | |
| C30CNM60B03H0.pdf | 0.04 | 1 | Request | |
| C30CNM60H03H0.pdf | 0.04 | 1 | Request | |
| C30CNM60B02H0.pdf | 0.04 | 1 | Request | |
| C30CNM60H02H0.pdf | 0.04 | 1 | Request | |
| C30CNM60A03A0.pdf | 0.04 | 1 | Request |
