Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.7V @ 250\u00b5A","Package / Case":"TO-251-3 Long Leads, IPak, TO-251AB","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Tc)","Reference Design Library":"STEVAL-ISB001V1: 1 Cell Charger using Discretes","Product Photos":"TO-251-3 Long Leads IPak","Rds On (Max) @ Id, Vgs":"8.5 Ohm @ 500mA, 10V","Datasheets":"STx1(H)NK60(-1,R)","FET Type":"MOSFET N-Channel, Metal Oxide","Gate Charge (Qg) @ Vgs":"10nC @ 10V","Stand...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.7V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Tc)","Reference Design Library":"STEVAL-ISB001V1: 1 Cell Charger using Discretes","Product Photos":"DPAK","Rds On (Max) @ Id, Vgs":"8.5 Ohm @ 500mA, 10V","Datasheets":"STx1(H)NK60(-1,R)","FET Type":"MOSFET N-Channel, Metal Oxide","Gate Charge (Qg) @ Vgs":"10nC @ 10V","Standard Package":"1","...