Product Datasheet Search Results:

SG2000FXF21.pdf78 Pages, 2097 KB, Scan
SG2000FXF21
N/a
Power and Industrial Semiconductors Data Book

Product Details Search Results:

Toshiba.co.jp/SG2000EX21
{"I(T) Max.(A) On-state Current":"1.0k²","Package":"CONTACT MFG.","V(DRM) Max.(V)Rep.Pk.Off Volt.":"2.5k","V(T) Max. (V)":"2.5"}...
613 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000EX24
{"I(T) Max.(A) On-state Current":"1.05k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"2.5k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"2.5","V(GT) Max.(V)":"1.0","V(T) Max. (V)":"2.4","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"14k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"23u"}...
896 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000EX26
{"I(T) Max.(A) On-state Current":"1.05k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"2.5k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"3.0","V(GT) Max.(V)":"1.0","V(T) Max. (V)":"3.5","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"18k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"23u"}...
895 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000GXH26
{"I(T) Max.(A) On-state Current":"1.0k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"4.5k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"3.0","V(GT) Max.(V)":"1.2","V(T) Max. (V)":"3.6","Military":"N","I(D) Max. (A) Leakage Current":"100m","I(TSM) Max. (A)":"16k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"26u"}...
900 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000R24
{"I(T) Max.(A) On-state Current":"1.05k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"1.3k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"2.5","V(GT) Max.(V)":"1.0","V(T) Max. (V)":"2.4","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"14k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"23u"}...
891 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000U24
{"I(T) Max.(A) On-state Current":"1.05k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"1.6k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"2.5","V(GT) Max.(V)":"1.0","V(T) Max. (V)":"2.4","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"14k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"23u"}...
891 Bytes - 04:57:02, 29 September 2024
Toshiba.co.jp/SG2000W24
{"I(T) Max.(A) On-state Current":"1.05k²","@I(T) (A) (Test Condition)":"2.0k","Package":"TO-200AE","V(DRM) Max.(V)Rep.Pk.Off Volt.":"1.8k","dv\/dt Min. (V\/us)":"1.0k","I(GT) Max. (A)":"2.5","V(GT) Max.(V)":"1.0","V(T) Max. (V)":"2.4","Military":"N","I(D) Max. (A) Leakage Current":"50m","I(TSM) Max. (A)":"14k","@Temp. (°C) (Test Condition)":"125","@ t(w) (s) (Test Condition)":"10m","t(q) Typ. (s)":"23u"}...
891 Bytes - 04:57:02, 29 September 2024