Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, GLASS-SEALED","Mfr Package Description":"SIDE BRAZED, DIP-14","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"70 ohm","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Number of Terminals":"14"}...

{"r(DS)on (Ohms)":"70","Features":"Norm-Open","@Vd (test) (V)":"0","Package":"DIP","P(D) Max.(W) Power Dissipation":"640m","Sw. Volt P-P Max.(V)":"20","Analog Sw. Cur. P-P Max.":"50m","Pins":"N/A","Military":"N","Technology":"MOS","@I(S) (test) (A)":"1.0m"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"0.6 ns","Typical Turn-Off Delay Time":"2 ns","Description":"Value","Maximum Continuous Drain Current":"0.05 A","Package":"16DIP","Mounting":"Through Hole","Maximum Gate Source Voltage":"-25 V","Typical Turn-On Delay Time":"0.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"70000@5V mOhm","Manufacturer":"Vishay / Semiconductor","Typical Fall Time":"6 ns"}...