Product Datasheet Search Results:
- S70V
- Genesic Semiconductor
- Rectifiers 1400V 70A Std. Recovery
- S70VR
- Genesic Semiconductor
- Rectifiers 1400V 70A REV Leads Std. Recovery
- FS70VS-06
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS70VS-2
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS70VSH-03
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS70VSJ-03
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS70VSJ-06
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
- FS70VSJ-06F
- Renesas Technology / Hitachi Semiconductor
- FET Transistor, High-Speed Switching Use Nch Power MOS FET
- FS70VSJ-06F-A1
- Renesas Technology / Hitachi Semiconductor
- FET Transistor, High-Speed Switching Use Nch Power MOS FET
- FS70VSJ-06F-T11
- Renesas Technology / Hitachi Semiconductor
- FET Transistor, High-Speed Switching Use Nch Power MOS FET, Tape and Reel
- FS70VSJ-2
- Renesas Technology / Hitachi Semiconductor
- MITSUBISHI Nch POWER MOSFET
Product Details Search Results:
Genesicsemi.com/S70V
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"10\u00b5A @ 100V","Voltage - Forward (Vf) (Max) @ If":"1.1V @ 70A","Family":"Diodes, Rectifiers - Single","Standard Package":"5","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"DO-5","Reverse Recovery Time (trr)":"-","Datasheets":"S70V~S70YR DO-5 (DO-203AB) Pkg Drawing","Current - Average Rectified (Io)":"70A","Operating Temperature - Junction":"-65\u00b0C ~ 150\u00b0C","Package / Case":"DO-2...
1615 Bytes - 15:54:26, 25 January 2025
Genesicsemi.com/S70VR
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Current - Reverse Leakage @ Vr":"10\u00b5A @ 100V","Voltage - Forward (Vf) (Max) @ If":"1.1V @ 70A","Family":"Diodes, Rectifiers - Single","Standard Package":"5","Series":"-","Capacitance @ Vr, F":"-","Supplier Device Package":"DO-5","Reverse Recovery Time (trr)":"-","Datasheets":"S70V~S70YR DO-5 (DO-203AB) Pkg Drawing","Current - Average Rectified (Io)":"70A","Operating Temperature - Junction":"-65\u00b0C ~ 150\u00b0C","Package / Case":"DO-2...
1646 Bytes - 15:54:26, 25 January 2025
Idt.com/IDT7MP2005S70V
{"Package":"VIMM","Output Config":"3-State","Nom. Supp (V)":"5.0","Pins":"28","Military":"N","Bits Per Word":"9","Technology":"CMOS","Number of Words":"8k","t(a) Max. (s) Access Time":"70n"}...
753 Bytes - 15:54:26, 25 January 2025
Idt.com/IDT7MP2011S70V
{"Package":"VIMM","Output Config":"3-State","Nom. Supp (V)":"5.0","Pins":"28","Military":"N","Bits Per Word":"9","Technology":"CMOS","Number of Words":"16k","t(a) Max. (s) Access Time":"70n"}...
754 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VS-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1509 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VS-2-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1509 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-03-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Application":"SWITCHING","Surfa...
1522 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-03-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Application":"SWITCHING","Surfa...
1520 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-06-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0084 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfa...
1521 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-06-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0084 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfa...
1521 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-2-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1518 Bytes - 15:54:26, 25 January 2025
Mitsubishichips.com/FS70VSJ-2-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"70 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"280 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHING","Surf...
1515 Bytes - 15:54:26, 25 January 2025
Documentation and Support
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