Product Datasheet Search Results:
- S524C20D11-R1
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
- S524C20D11-R1T
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Product Details Search Results:
Samsung.com/S524C20D11-R1
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1591 Bytes - 08:56:39, 04 January 2025
Samsung.com/S524C20D11-R1T
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1599 Bytes - 08:56:39, 04 January 2025
Documentation and Support
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1711-R10W.pdf | 0.13 | 1 | Request | |
1711-R10VBMS.pdf | 0.13 | 1 | Request | |
1711-R10VLSW.pdf | 0.13 | 1 | Request | |
1711-R10VPWGN.pdf | 0.13 | 1 | Request | |
1711-R10VLSM.pdf | 0.13 | 1 | Request | |
PVML-11-R1-UNV1-S890.pdf | 5.46 | 1 | Request | |
VMVL-11-R1-UNV34-S903.pdf | 2.36 | 1 | Request | |
VMVL-11-R1-UNV1-S890.pdf | 2.36 | 1 | Request | |
PVML-11-R1-UNV1.pdf | 5.46 | 1 | Request | |
PVML-11-R1-G-UNV1-S903.pdf | 5.46 | 1 | Request | |
VMVL-11-R1-UNV1.pdf | 2.36 | 1 | Request | |
VMVL-11-R1-UNV1-S903.pdf | 2.36 | 1 | Request |