Product Datasheet Search Results:
20 Pages, 96 KB, Original- S524C20D11-R1
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
20 Pages, 96 KB, Original- S524C20D11-R1T
- Samsung Semiconductor Division
- 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Product Details Search Results:
Samsung.com/S524C20D11-R1
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1591 Bytes - 13:31:56, 22 November 2024
Samsung.com/S524C20D11-R1T
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Clock Frequency-Max (fclk)":"0.1000 MHz","Number of Words Code":"128","Write Cycle Time-Max (tWC)":"10 ms","Supply Voltage-Nom (Vsup)":"3.3 V","Temperature Grade":"INDUSTRIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"-40 Cel","Number of Words":"128 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1024 deg","Supply Voltage-Max (Vsup)":"5...
1599 Bytes - 13:31:56, 22 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DG4S4W_012A_BB_60_S524.pdf | 1.43 | 1 | Request | |
| 6ES5242-5AB11.pdf | 1.49 | 1 | Request | |
| 6ES5243-1AB11.pdf | 1.64 | 1 | Request | |
| 6ES5243-1AA13.pdf | 1.64 | 1 | Request | |
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| 6ES5240-5AA51.pdf | 2.36 | 1 | Request | |
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| 6ES5242-1AA31.pdf | 1.49 | 1 | Request | |
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| 6ES5240-1AA12.pdf | 2.36 | 1 | Request | |
| 6ES5240-1AA11.pdf | 2.36 | 1 | Request |
