Product Datasheet Search Results:
1 Pages, 36 KB, Scan- RN2961-71
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
9 Pages, 170 KB, Original- RN2961FS(TPL3)
- Toshiba
- Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 4.7K x 4.7Kohms
6 Pages, 191 KB, Scan- RN2961(TE85L)
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 173 KB, Scan- RN2961TE85L
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 173 KB, Scan- RN2961TE85N
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 191 KB, Scan- RN2961(TE85R)
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 173 KB, Scan- RN2961TE85R
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Product Details Search Results:
N_a/RN2961
{"Category":"PNP Transistor, Transistor","Amps":"0.1A","MHz":"<1 MHz","Volts":"50V"}...
525 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","...
1488 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961-71
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"US6, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Number of Elements":"2","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN R...
1369 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961FE
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"EXTREME SUPERMINI, ES6, 2-2N1A, 6 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Ter...
1495 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961FS
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1F1C, FS6, 6 PIN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.0500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"PNP","Package S...
1435 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961FS(TPL3)
{"Continuous Collector Current":"- 50 mA","Factory Pack Quantity":"10000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"PNP","DC Collector/Base Gain hfe Min":"30","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"20 V","Packaging":"Reel","Peak DC Collector Current":"50 mA","Pd - Power Dissipation":"50 mW","Typical Resistor Ratio":"1","Configuration":"Dual","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...
1402 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961(TE85L)
{"Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"US6, 2-2J1B, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Po...
1485 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961TE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1423 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961TE85N
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1423 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961(TE85R)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"US6, 2-2J1B, 6 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity...
1481 Bytes - 16:49:38, 17 November 2024
Toshiba.co.jp/RN2961TE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1423 Bytes - 16:49:38, 17 November 2024
Toshiba.semicon-storage.com/RN2961FE(TE85L,F)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Mounting Type":"Surface Mount","Transistor Type":"2 PNP - Pre-Biased (Dual)","Product Photos":"SOT-563","Family":"Transistors (BJT) - Arrays, Pre-Biased","Resistor - Base (R1) (Ohms)":"4.7k","Series":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250\u00b5A, 5mA","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"ES6","Packaging":"Digi-Reel\u00ae","Resistor - Emitter Base (R2) (Ohms)":"4.7k","Da...
1836 Bytes - 16:49:38, 17 November 2024
