Product Datasheet Search Results:
- RA08H1317M
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA08H1317M-01
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA08H1317M-101
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA08H1317M-E01
- Mitsubishi Electric & Electronics Usa, Inc.
- 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
- RA08H1317M
- Mitsubishi Electric Semiconductor
- 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
- RA08H1317M-01
- Mitsubishi Electric Semiconductor
- 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
- RA08H1317M-101
- Mitsubishi Electric Semiconductor
- RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
- RA08H1317M-E01
- Mitsubishi Electric Semiconductor
- 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
Product Details Search Results:
Mitsubishichips.com/RA08H1317M
{"Status":"ACTIVE","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"110 Cel","Operating Frequency-Min":"135 MHz","Construction":"MODULE","VSWR-Max":"4","Input Power-Max (CW)":"16 dBm"}...
1112 Bytes - 17:34:20, 28 November 2024
Mitsubishichips.com/RA08H1317M-01
{"Status":"DISCONTINUED","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"30 X 10 MM, 5.40 MM HEIGHT, MODULE-4","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"90 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","VSWR-Max":"4.4","Input Power-Max (CW)":"16 dBm"}...
1204 Bytes - 17:34:20, 28 November 2024
Mitsubishichips.com/RA08H1317M-101
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Characteristic Impedance":"50 ohm","Mfr Package Description":"ROHS COMPLIANT, H46S, 4 PIN","Operating Temperature-Min":"-30 Cel","Operating Frequency-Max":"175 MHz","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"90 Cel","Operating Frequency-Min":"135 MHz","Construction":"MODULE","EU RoHS Compliant":"Yes","VSWR-Max":"4.4","Input Power-Max (CW)":"16.02 dBm"}...
1274 Bytes - 17:34:20, 28 November 2024
Mitsubishichips.com/RA08H1317M-E01
{"Status":"DISCONTINUED","Operating Frequency-Max":"175 MHz","Characteristic Impedance":"50 ohm","Mfr Package Description":"30 X 10 MM, 5.40 MM HEIGHT, MODULE-4","Operating Temperature-Min":"-30 Cel","RF/Microwave Device Type":"NARROW BAND HIGH POWER","Operating Temperature-Max":"90 Cel","Operating Frequency-Min":"135 MHz","Construction":"COMPONENT","VSWR-Max":"4.4","Input Power-Max (CW)":"16 dBm"}...
1211 Bytes - 17:34:20, 28 November 2024
Mitsubishi_semiconductor/RA08H1317M-502
885 Bytes - 17:34:20, 28 November 2024