Product Datasheet Search Results:
18 Pages, 616 KB, Original- PTFB183404FV2
- Infineon Technologies Ag
- 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
18 Pages, 616 KB, Original- PTFB183404FV2R250
- Infineon Technologies Ag
- 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Infineon.com/PTFB183404FV2
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1474 Bytes - 16:39:24, 28 November 2024
Infineon.com/PTFB183404FV2R250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","...
1496 Bytes - 16:39:24, 28 November 2024
