Product Datasheet Search Results:
6 Pages, 279 KB, Scan- PHD2N60E118
- Nxp
- 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Nxp.com/PHD2N60E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"144 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tran...
1407 Bytes - 14:42:34, 11 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SS5J2-60LPHD2-S05DSB6.pdf | 40.58 | 1 | Request |
