Product Datasheet Search Results:
- PHB2N60E118
- Nxp
- 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Nxp.com/PHB2N60E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"144 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tran...
1407 Bytes - 14:45:59, 11 March 2025
Documentation and Support
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FE_DE118803.pdf | 0.22 | 1 | Request | |
3AE1185-6....-.....pdf | 6.33 | 1 | Request | |
3AE1184-4....-.....pdf | 6.33 | 1 | Request | |
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3AE1184-6....-.....pdf | 6.33 | 1 | Request | |
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3AE1186-7....-.....pdf | 6.33 | 1 | Request |