Product Datasheet Search Results:

PHB2N60E118.pdf6 Pages, 279 KB, Scan
PHB2N60E118
Nxp
1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Nxp.com/PHB2N60E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"144 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Tran...
1407 Bytes - 14:45:59, 11 March 2025

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