Product Datasheet Search Results:

P2N2222.pdf1 Pages, 99 KB, Scan
P2N2222
Continental Device India Limited
Semiconductor Device Data Book 1996
P2N2222A.pdf1 Pages, 95 KB, Scan
P2N2222A
Continental Device India Limited
Semiconductor Device Data Book 1996
P2N2222.pdf1 Pages, 37 KB, Scan
P2N2222
Motorola
European Master Selection Guide 1986
P2N2222A.pdf6 Pages, 140 KB, Original
JANSP2N2222A.pdf3 Pages, 135 KB, Original
JANSP2N2222A
Microsemi Corp.
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
JANSP2N2222AL.pdf3 Pages, 65 KB, Original
JANSP2N2222AL
Microsemi Corp.
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
JANSP2N2222AUA.pdf3 Pages, 135 KB, Original
JANSP2N2222AUA
Microsemi Corp.
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
JANSP2N2222AUB.pdf3 Pages, 135 KB, Original
JANSP2N2222AUB
Microsemi Corp.
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
JANSP2N2222AUBC.pdf3 Pages, 135 KB, Original
JANSP2N2222AUBC
Microsemi Corp.
800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
P2N2222.pdf1 Pages, 34 KB, Scan
P2N2222
N/a
Shortform Data and Cross References (Misc Datasheets)
P2N2222A.pdf1 Pages, 34 KB, Scan
P2N2222A
N/a
Shortform Data and Cross References (Misc Datasheets)
P2N2222.pdf6 Pages, 140 KB, Original
P2N2222
On Semiconductor
Amplifier Transistors(NPN Silicon)

Product Details Search Results:

Microsemi.com/JANSP2N2222A
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.8000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1405 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AL
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.8000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1411 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Collector Current-Max (IC)":"0.8000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...
1425 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUB
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1414 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUBC
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1418 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222A
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Current - Collector (Ic) (Max)":"600mA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","PCN Obsolescence\/ EOL":"Multiple Devices 30\/Jun\/2006","Datasheets":"P2N2222A","Current - Collector Cutoff (...
1684 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AG
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Current - Collector (Ic) (Max)":"600mA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","PCN Obsolescence\/ EOL":"Multiple Devices 08\/Nov\/2014 Multiple Devices Revision 26\/Nov\/2014","Datasheets":...
1827 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222ARL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Re...
1704 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222ARL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Re...
1670 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AZL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Bo...
1703 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AZL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Bo...
1702 Bytes - 09:41:40, 07 October 2024