Product Datasheet Search Results:
- P2N2222
- Continental Device India Limited
- Semiconductor Device Data Book 1996
- P2N2222A
- Continental Device India Limited
- Semiconductor Device Data Book 1996
- P2N2222A
- Motorola / Freescale Semiconductor
- Silicon NPN Transistor
- JANSP2N2222A
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
- JANSP2N2222AL
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
- JANSP2N2222AUA
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JANSP2N2222AUB
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JANSP2N2222AUBC
- Microsemi Corp.
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- P2N2222
- On Semiconductor
- Amplifier Transistors(NPN Silicon)
Product Details Search Results:
Microsemi.com/JANSP2N2222A
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.8000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1405 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AL
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"SIMILAR TO TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"0.8000 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTT...
1411 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Collector Current-Max (IC)":"0.8000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...
1425 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUB
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1414 Bytes - 09:41:40, 07 October 2024
Microsemi.com/JANSP2N2222AUBC
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1418 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222A
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Current - Collector (Ic) (Max)":"600mA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","PCN Obsolescence\/ EOL":"Multiple Devices 30\/Jun\/2006","Datasheets":"P2N2222A","Current - Collector Cutoff (...
1684 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AG
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Current - Collector (Ic) (Max)":"600mA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Voltage - Collector Emitter Breakdown (Max)":"40V","Power - Max":"625mW","PCN Obsolescence\/ EOL":"Multiple Devices 08\/Nov\/2014 Multiple Devices Revision 26\/Nov\/2014","Datasheets":...
1827 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222ARL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Re...
1704 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222ARL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Re...
1670 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AZL1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Bo...
1703 Bytes - 09:41:40, 07 October 2024
Onsemi.com/P2N2222AZL1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"100 @ 150mA, 10V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"10nA","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"40V","Supplier Device Package":"TO-92-3","Packaging":"Tape & Bo...
1702 Bytes - 09:41:40, 07 October 2024