Datasheet.Directory

{"Continuous Drain Current":"1(A)","Mounting":"Surface Mount","Forward Transconductance (Typ)":"0.84(S)","Rad Hardened":"No","Channel Type":"N","Packaging":"Tape and Reel","Operating Temp Range":"-65C to 125C","Package Type":"SOT-89","Drain Source Voltage (Max)":"20(V)","Power Dissipation (Max)":"10000(mW)","Screening Level":"Military","Pin Count":"3 +Tab","Number of Elements":"1","Power Gain (Typ)@Vds":"11@4.8V(dB)"}...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"10 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Transistor Application":"AMPLIFIER...