Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.8V @ 250\u00b5A","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Ta)","Gate Charge (Qg) @ Vgs":"30nC @ 10V","Product Photos":"SOT223-3L","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"65 mOhm @ 5A, 10V","Datasheets":"NDT452AP MA04A Pkg Drawing","FET Type":"MOSFET P-Channel, Metal Oxide","Standard P...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"40 ns","Description":"Value","Maximum Continuous Drain Current":"5 A","Package":"4SOT-223","Typical Turn-On Delay Time":"9 ns","Mounting":"Surface Mount","Typical Rise Time":"20 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-65 to 150 \u00b0C","RDS-on":"65@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"19 ns"}...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"5 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5(A)","Mounting":"Surface Mount","Operating Temp Range":"-65C to 150C","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"3(W)","Rad Hardened":"No","Package Type":"SOT-223","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"C(iss) Max. (F)":"690p","Absolute Max. Power Diss. (W)":"3.0","V(BR)DSS (V)":"30","g(fs) Max, (S) Trans. conduct,":"7.0","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":".1","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"15","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.8","V(GS)th Min. (V)":"1.0","Package":"SOT-223","Military":"N","td(on) Max (s) On ti...