Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Dose Level":"100","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"12 A","Package":"3TO-257AA","Mounting":"Through Hole","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"25(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"230@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Ty...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"1.56 W","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200(Min) V","Dose Level":"100 krad","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"12 A","Package":"3TO-257AA","Mounting":"Through Hole","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"25(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.23@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rect...

{"Package":"DIP","Output Config":"Open-Coll.","P(D) Max.(W) Power Dissipation":"375m","Nom. Supp (V)":"5.0","Pins":"16","Military":"N","Bits Per Word":"4","Technology":"TTL","Number of Words":"16"}...

{"Status":"Discontinued","tW Min (S)":"60n","t(acc) Max. (S)":"50n","Package":"DIP","Number of Words":"16","P(D) Max.(W) Power Dissipation":"550m","Nom. Supp (V)":"5.0","Pins":"16","Military":"N","Bits Per Word":"4","Technology":"TTL","Output Config":"Open-Coll."}...