Product Datasheet Search Results:
- MJE2361TBD
- On Semiconductor L.l.c.
- 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR
Product Details Search Results:
Onsemi.com/MJE2361TBD
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, TO-220AB, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"350 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"10 MHz","Collector Current-Max (IC)":"0.5000 A","Case Connection":"COLLECTOR","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR...
1329 Bytes - 09:13:15, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2GTBDPX_01T_DWG.pdf | 0.15 | 1 | Request | |
2GTBDPA_01T.pdf | 0.72 | 1 | Request | |
2GTBDPX_01T.pdf | 0.72 | 1 | Request | |
2GTBDPA_01T_DWG.pdf | 0.15 | 1 | Request | |
GT2104-RTBD.pdf | 19.62 | 1 | Request | |
GT2105-QTBDS.pdf | 2.46 | 1 | Request | |
GS2110-WTBD.pdf | 2.90 | 1 | Request | |
GS2107-WTBD.pdf | 2.90 | 1 | Request | |
GT2708-VTBD(C).pdf | 2.31 | 1 | Request | |
GT1675M-VTBD.pdf | 8.07 | 1 | Request | |
GS2110-WTBD-N.pdf | 10.95 | 1 | Request | |
GT2510-WXTBD.pdf | 14.09 | 1 | Request |