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MGF0918A-01.pdf4 Pages, 105 KB, Original

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Mitsubishichips.com/MGF0918A-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"3 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"10 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"HE...
1457 Bytes - 03:24:50, 25 November 2024

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