Product Datasheet Search Results:
- MG75Q2YS11
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- MG75Q2YS11
- Toshiba
- MG75Q2YS11
- MG75Q2YS11
- Toshiba
- MG75Q2YS11
Product Details Search Results:
Toshiba.co.jp/MG75Q2YS11
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"75 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE","Package Style":"FLANGE MOUNT","Number of...
1165 Bytes - 16:42:41, 13 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
MG75Q2YS11.pdf | 0.22 | 1 | Request |