Product Datasheet Search Results:
6 Pages, 389 KB, Original- MBN1200E33C
- Hitachi Semiconductor
- TRANS IGBT MODULE N-CH 3300V 1200A
6 Pages, 390 KB, Original- MBN1200E33C
- Hitachi Metals America, Ltd.
- 1200 A, 3300 V, N-CHANNEL IGBT
Product Details Search Results:
Hitachi-metals.co.jp/MBN1200E33C
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-9","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"3500 ns","Collector-emitter Voltage-Max":"3300 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1200 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"2900 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configur...
1292 Bytes - 18:38:08, 24 March 2025
