Product Datasheet Search Results:
- M52S64164A-10TG
- Elite Semiconductor Memory Technology, Inc.
- 4M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO54
Product Details Search Results:
Esmt.com.tw/M52S64164A-10TG
{"Terminal Pitch":"0.8000 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"4M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"4.19E6 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"6.71E7 deg","Supply Voltage-Max (Vsup)":"2.7 V","Number of Ports":"1","Supply Vo...
1624 Bytes - 08:37:19, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
LFR-M2-N3_8-C10TGK.pdf | 2.27 | 1 | Request | |
FRC-M3-G3_4-C10TG.pdf | 1.97 | 1 | Request | |
LFR-M2-N3_8-E10TGK.pdf | 2.27 | 1 | Request | |
FRC-M1-G1_4-C10TGK.pdf | 1.97 | 1 | Request | |
LFR-M3-N1_2-C10TG.pdf | 2.27 | 1 | Request | |
LFR-M1-G1_8-E10TGK.pdf | 2.27 | 1 | Request | |
FRC-M2-G1_4-C10TG.pdf | 1.97 | 1 | Request | |
LFR-M3-N3_4-E10TG.pdf | 2.27 | 1 | Request | |
FRC-M3-N1_2-E10TGK.pdf | 1.97 | 1 | Request | |
LFR-M1-G1_4-E10TGK.pdf | 2.27 | 1 | Request | |
FRC-M3-N1_2-C10TG.pdf | 1.97 | 1 | Request | |
FRC-M2-N1_2-E10TG.pdf | 1.97 | 1 | Request |