Product Datasheet Search Results:

FHX04LG-E1.pdf5 Pages, 113 KB, Original
FHX04LG-E1
Fujitsu
FET: P Channel: ID 0.06 A
FHX05LG-E1.pdf5 Pages, 113 KB, Original
FHX05LG-E1
Fujitsu
FET: P Channel: ID 0.06 A
FHX13LG-E1.pdf6 Pages, 85 KB, Original
FHX13LG-E1
Fujitsu
TRANS JFET N-CH 3.5V 60MA 4SMT
FHX14LG-E1.pdf6 Pages, 85 KB, Original
FHX14LG-E1
Fujitsu
TRANS JFET N-CH 3.5V 60MA 4SMT
FHX35LG-E1.pdf6 Pages, 81 KB, Original
FHX35LG-E1
Fujitsu
FET: P Channel: ID 0.085 A
FSU01LG-E1.pdf5 Pages, 99 KB, Original
FSU01LG-E1
Fujitsu
FET: P Channel: ID 0.075 A
FSU02LG-E1.pdf4 Pages, 96 KB, Original
FSU02LG-E1
Fujitsu
FET: P Channel: ID 0.15 A
FSX017LG-E1.pdf4 Pages, 77 KB, Original
FSX017LG-E1
Fujitsu
FET: P Channel: ID 0.075 A
HY628100BLG-E.pdf10 Pages, 123 KB, Original
HY628100BLG-E
Hynix Semiconductor, Inc.
128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLG-E.pdf10 Pages, 123 KB, Original
HY628100BLLG-E
Hynix Semiconductor, Inc.
128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628400ALG-E.pdf11 Pages, 127 KB, Original
HY628400ALG-E
Hynix Semiconductor, Inc.
512K x8 bit 5.0V Low Power CMOS slow SRAM

Product Details Search Results:

Eaton/LG-E
Feature Code Description SYSTEM L LOAD SENSING, NON-LOAD REACTION DISPLACEMENT G 184 CM3/REV - _ 0 SPECIAL FEATURE _ STANDARD, NO INDICATION AND WRITE CLOSE LEFT (E.G. UB-E) IN THE CASE OF NO SPECIAL FEATURE. - - LOAD SENSING, NON-LOAD REACTION, DYNAMIC SIGNAL (E.Q. LB-D2-E) DESIGN SYMBOL E CURRENT DESIGN...
1288 Bytes - 14:39:46, 13 November 2024
Onsemi.com/LA7958N-LG-E
{"Category":"Integrated Circuits (ICs)","Series":"*","Family":"Interface - Analog Switches, Multiplexers, Demultiplexers","Standard Package":"22"}...
910 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP100P04PLG-E1-AY
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Input Capacitance (Ciss) @ Vds":"15100pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"TO-263","Datasheets":"NP100P04PLG","Rds On (Max) @ Id, Vgs":"3.7 mOhm @ 50A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","M...
1713 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP100P04PLG-E2-AY
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0051 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM...
1673 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP100P06PLG-E1-AY
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"6 mOhm @ 50A, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Series":"-","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"TO-263","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"NP100P06PLG","Power - Max":"1.8W","Standard Package":"800","PCN Assembly/Origin":"Wafer Fabrication Site Chan...
1792 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP100P06PLG-E2-AY
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0078 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM...
1675 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP15P04SLG-E1-AY
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP15P04SLG","Rds On (Max) @ Id, Vgs":"40 mOhm @ 7.5A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain t...
1671 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP15P04SLG-E2-AY
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)"...
1660 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP15P06SLG-E1-AY
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP15P06SLG","Rds On (Max) @ Id, Vgs":"70 mOhm @ 7.5A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain t...
1666 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP15P06SLG-E2-AY
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"19 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0950 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"45...
1657 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP20P04SLG-E1-AY
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP20P04SLG","Rds On (Max) @ Id, Vgs":"25 mOhm @ 10A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to...
1665 Bytes - 14:39:46, 13 November 2024
Renesas.com/NP20P04SLG-E2-AY
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"40 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0380 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"P-CHANNEL","FET ...
1611 Bytes - 14:39:46, 13 November 2024

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