NP20P04SLG-E2-AY
20 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252

From Renesas Electronics

StatusACTIVE
Avalanche Energy Rating (Eas)40 mJ
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min40 V
Drain Current-Max (ID)20 A
Drain-source On Resistance-Max0.0380 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, MP-3ZK, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)60 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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