Product Datasheet Search Results:
- K4H510438J-LLB30
- Samsung Semiconductor Division
- 128M X 4 DDR DRAM, 0.7 ns, PDSO66
Product Details Search Results:
Samsung.com/K4H510438J-LLB30
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.6500 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"GULL WING","Operating Temperature-Max":"70 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"5.37E8 deg","EU RoHS ...
1751 Bytes - 22:47:10, 18 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
CLB30I1200PZ.pdf | 0.15 | 1 | Request | |
CLB30I1200HB.pdf | 0.15 | 1 | Request | |
LB300M.pdf | 0.03 | 1 | Request | |
LB300M_HDG.pdf | 0.03 | 1 | Request | |
3VL9206-6LB30.pdf | 8.20 | 1 | Request | |
6FM1480-8LB30-0AA7.pdf | 8.13 | 1 | Request | |
3VL9325-6LB30.pdf | 8.20 | 1 | Request | |
US2:WELB307E.pdf | 4.64 | 1 | Request | |
3VL9680-6LB30.pdf | 8.20 | 1 | Request | |
6FM1480-8LB30-0AA4.pdf | 8.13 | 1 | Request | |
6FM1480-6LB30-1AA1.pdf | 8.13 | 1 | Request | |
3VL8716-1LB30-.....pdf | 8.20 | 1 | Request |