Product Datasheet Search Results:
59 Pages, 1433 KB, Original- K4B1G0846F-HCF80
- Samsung Semiconductor Division
- 128M X 8 DDR DRAM, 0.3 ns, PBGA78
Product Details Search Results:
Samsung.com/K4B1G0846F-HCF80
{"Terminal Finish":"TIN SILVER COPPER","Terminal Pitch":"0.8000 mm","Access Mode":"MULTI BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"95 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"1.5 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"1.07E9 deg","EU RoHS Compliant"...
1697 Bytes - 08:24:31, 19 December 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DS_K4B1G0846I_BC.pdf | 1.58 | 1 | Request | |
| K4B1G0846I-BCK0.pdf | 1.58 | 1 | Request | |
| K4B1G0846I-BCMA.pdf | 1.58 | 1 | Request | |
| K4B1G0846I-BCNB.pdf | 1.58 | 1 | Request | |
| K4B1G0846I-BYK0.pdf | 1.76 | 1 | Request | |
| K4B1G0846I-BYMA.pdf | 1.76 | 1 | Request | |
| K4B1G0846I-BYNB.pdf | 1.76 | 1 | Request | |
| DS_K4B1G0846I_BY_M.pdf | 1.76 | 1 | Request |
