Product Datasheet Search Results:
- JANTXV2N6849U
- International Rectifier
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET
- JANTXV2N6849U
- Microsemi Corp.
- 6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/JANTXV2N6849U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"165 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1558 Bytes - 16:06:30, 03 January 2025
Microsemi.com/JANTXV2N6849U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"320 mOhm @ 6.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/564","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"2N6849U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","...
1589 Bytes - 16:06:30, 03 January 2025
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