Product Datasheet Search Results:
2 Pages, 83 KB, Original- JAN2N3019S
- Crystalonics
- 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
6 Pages, 259 KB, Original- JAN2N3019S
- Microchip Technology
- Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Bag
6 Pages, 259 KB, Original- JAN2N3019S
- Microsemi
- Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Bag
4 Pages, 103 KB, Original- JAN2N3019S
- On Semiconductor L.l.c.
- 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2 Pages, 199 KB, Original- JAN2N3019S
- Semicoa
- 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Product Details Search Results:
Crystalonics.com/JAN2N3019S
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"CASE 79-04, TO-39, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GEN...
1286 Bytes - 09:50:31, 17 November 2024
Microchip.com/JAN2N3019S
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Through Hole","Emitter-Base Voltage":"7(V)","Rad Hardened":"No","Packaging":"Bag","Power Dissipation":"0.8(W)","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"140(V)","DC Current Gain":"50","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...
1481 Bytes - 09:50:31, 17 November 2024
Microsemi.com/JAN2N3019S
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N5682","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"500mV @ 50mA, 500mA","Series":"Military, MIL-PRF-19500/391","Package / Case":"TO-205AD, TO-39-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"80V","Power - Max":"800mW","Packaging":"Bulk","Datasheets":"2N3019S","Current - Collector Cutoff (Max)":"10nA","Supplie...
1598 Bytes - 09:50:31, 17 November 2024
Onsemi.com/JAN2N3019S
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"CASE 205AB-01, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SING...
1325 Bytes - 09:50:31, 17 November 2024
Semicoa.com/JAN2N3019S
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"1 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":...
1271 Bytes - 09:50:31, 17 November 2024
Documentation and Support
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