Product Datasheet Search Results:
1 Pages, 32 KB, Scan- JAN2N2369A
- Motorola
- Motorola Semiconductor Datasheet Library
3 Pages, 55 KB, Original- JAN2N2369A
- Microsemi
- Bipolar Transistors - BJT NPN Transistor
8 Pages, 437 KB, Original- JAN2N2369AU
- Microsemi Corp.
- 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
3 Pages, 55 KB, Original- JAN2N2369AUA
- Microsemi
- Bipolar Transistors - BJT NPN Transistor
3 Pages, 55 KB, Original- JAN2N2369AUB
- Microsemi
- Bipolar Transistors - BJT NPN Transistor
1 Pages, 158 KB, Scan- JAN2N2369A
- N/a
- Shortform Transistor PDF Datasheet
1 Pages, 30 KB, Scan- JAN2N2369A
- National Semiconductor
- Pro-Electron Transistor Datasheets
2 Pages, 211 KB, Original- JAN2N2369A
- Semicoa
- 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
Product Details Search Results:
Microsemi.com/JAN2N2369A
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"JANTX2N4xxx","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Current - Collector Cutoff (Max)":"400nA","Series":"Military, MIL-PRF-19500/317","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-18","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Power - Max":"...
1764 Bytes - 18:01:16, 16 November 2024
Microsemi.com/JAN2N2369AU
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"SURFACE MOUNT PACKAGE-6","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1399 Bytes - 18:01:16, 16 November 2024
Microsemi.com/JAN2N2369AUA
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"20","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"SURFACE MOUNT PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"12 ns","Turn-off Time-Max (toff)":"18 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tra...
1382 Bytes - 18:01:16, 16 November 2024
Microsemi.com/JAN2N2369AUB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"450mV @ 10mA, 100mA","Series":"Military, MIL-PRF-19500/317","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"20V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2369A, 2N4449","Current - Collector Cutoff (Max)":"400nA","Supplier Device Package":"UB","Standard Pac...
1482 Bytes - 18:01:16, 16 November 2024
Semicoa.com/JAN2N2369A
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Num...
1228 Bytes - 18:01:16, 16 November 2024
Semicoa.com/JAN2N2369AUB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration...
1294 Bytes - 18:01:16, 16 November 2024
Documentation and Support
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