Product Details Search Results:
Ixys.com/IXTH1N250
{"Factory Pack Quantity":"30","Vds - Drain-Source Breakdown Voltage":"2500 V","Transistor Polarity":"N-Channel","Package / Case":"TO-247-3","Fall Time":"39 ns","Packaging":"Tube","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"IXYS","Unit Weight":"0.229281 oz","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"IXYS","Forward Transconductance - Min":"1.8 mS","Id - Continuous Drain Current":"1.5 A","Rds On - Drain-Source Resistance":"40 Ohms","...
1627 Bytes - 03:43:13, 17 November 2024
Zilog.com/IXTH1N250
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"40 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1436 Bytes - 03:43:13, 17 November 2024
