Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"22A","Switching Energy":"-","Vce(on) (Max) @ Vge, Ic":"3V @ 15V, 12A","Td (on/off) @ 25\u00b0C":"-","Input Type":"Standard","Package / Case":"TO-247-3","Gate Charge":"20.4nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"1200V","Reverse Recovery Time (trr)":"-","Datasheets":"IXGx12N120A3","Standard Package":"30","Test Condition":"-","IGBT Type":"PT","Current - Collector Pulsed (Icm)":"60A","Family...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Turn-off Time-Nom (toff)":"1545 ns","Collector Current-Max (IC)":"22 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"202 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","Transistor Application":"POWER...