Product Datasheet Search Results:
- IRLR120N
- Fairchild Semiconductor
- Advanced Power MOSFET
- AUIRLR120N
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 10A Automotive 3-Pin(2+Tab) DPAK Tube
- AUIRLR120NTRL
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 10A Automotive 3-Pin(2+Tab) DPAK T/R
- IRLR120NPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK Tube
- IRLR120NTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R
- IRLR120NTRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R
- AUIRLR120N
- International Rectifier
- MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- AUIRLR120NTR
- International Rectifier
- 10 A, 100 V, 0.225 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
- AUIRLR120NTRL
- International Rectifier
- MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- AUIRLR120NTRR
- International Rectifier
- MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- IRLR120N
- International Rectifier
- IRLR120N
- IRLR120NPBF
- International Rectifier
- MOSFET N-CH 100V 10A DPAK - IRLR120NPBF
Product Details Search Results:
Infineon.com/AUIRLR120N
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1553 Bytes - 10:48:16, 05 January 2025
Infineon.com/AUIRLR120NTRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"48(W)","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1560 Bytes - 10:48:16, 05 January 2025
Infineon.com/IRLR120NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1530 Bytes - 10:48:16, 05 January 2025
Infineon.com/IRLR120NTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1544 Bytes - 10:48:16, 05 January 2025
Infineon.com/IRLR120NTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1541 Bytes - 10:48:16, 05 January 2025
Irf.com/AUIRLR120N
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"20nC @ 5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"185 mOhm @ 6A, 1...
1805 Bytes - 10:48:16, 05 January 2025
Irf.com/AUIRLR120NTR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"85 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35 A","Channel Type":"N-CHANNE...
1608 Bytes - 10:48:16, 05 January 2025
Irf.com/AUIRLR120NTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"20nC @ 5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"185 mOhm @ 6A, 1...
1849 Bytes - 10:48:16, 05 January 2025
Irf.com/AUIRLR120NTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"85 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35 A","Channel Type":"N-CHANNE...
1615 Bytes - 10:48:16, 05 January 2025
Irf.com/IRLR120N
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"85 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1512 Bytes - 10:48:16, 05 January 2025
Irf.com/IRLR120NPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"20nC @ 5V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"185 mOhm @ 6A, 10V","Datasheets":"IRLR/U120NPbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Packag...
1967 Bytes - 10:48:16, 05 January 2025
Irf.com/IRLR120NTR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"85 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1522 Bytes - 10:48:16, 05 January 2025
Documentation and Support
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IRLR120N.pdf | 0.18 | 1 | Request |