Product Datasheet Search Results:

IRFZ20.pdf1 Pages, 52 KB, Scan
IRFZ20
Motorola
Switchmode Datasheet
IRFZ20.pdf1 Pages, 44 KB, Original
IRFZ20
International Rectifier
TO-220 N-Channel HEXFET Power MOSFET
IRFZ20.pdf4 Pages, 218 KB, Scan
IRFZ20
N/a
FET Data Book
IRFZ20FI.pdf1 Pages, 79 KB, Scan
IRFZ20FI
N/a
Shortform Datasheet & Cross References Data
IRFZ20.pdf5 Pages, 312 KB, Scan
IRFZ20
Samsung Electronics
N-Channel Power MOSFETS
IRFZ20.pdf1 Pages, 81 KB, Scan
IRFZ20
Semelab Plc.
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFZ20R3.pdf1 Pages, 81 KB, Scan
IRFZ20R3
Semelab Plc.
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFZ20.pdf1 Pages, 51 KB, Scan
IRFZ20
Stmicroelectronics
Shortform Data Book 1988
IRFZ20FI.pdf1 Pages, 51 KB, Scan
IRFZ20FI
Stmicroelectronics
Shortform Data Book 1988
IRFZ20.pdf6 Pages, 235 KB, Original
IRFZ20
Vishay [siliconix]
MOSFET N-CH 50V 15A TO-220AB - IRFZ20
IRFZ20PBF.pdf6 Pages, 235 KB, Original
IRFZ20PBF
Vishay [siliconix]
MOSFET N-CH 50V 15A TO-220AB - IRFZ20PBF

Product Details Search Results:

Semelab.co.uk/IRFZ20
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source ...
1305 Bytes - 17:24:14, 23 December 2024
Semelab.co.uk/IRFZ20R3
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Conf...
1351 Bytes - 17:24:14, 23 December 2024
St.com/IRFZ20FI
{"C(iss) Max. (F)":"850p","Absolute Max. Power Diss. (W)":"30","r(DS)on Max. (Ohms)":"100m","I(GSS) Max. (A)":"500n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"90n","V(BR)DSS (V)":"50","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"5.0","I(D) Abs. Drain Current (A)":"12.5"}...
913 Bytes - 17:24:14, 23 December 2024
Vishay.com/IRFZ20
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"850pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRFZ20, SiHFZ20 Packaging Information","Rds On (Max) @ Id, Vgs":"100 mOhm @ 10A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"40W","Package / Case":"TO-220-3","Mounting Type"...
1611 Bytes - 17:24:14, 23 December 2024
Vishay.com/IRFZ20PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"15A (Tc)","Gate Charge (Qg) @ Vgs":"17nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"PCN-SIL-0102014 Rev 0 23/May/2014","Rds On (Max) @ Id, Vgs":"100 mOhm @ 10A, 10V","Datasheets":"IRFZ20, SiHFZ20 Packaging Information","FET Type":"MOSFET N-Chann...
1914 Bytes - 17:24:14, 23 December 2024
Vishay_pcs/IRFZ20PBF
{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"15 A","Width":"4.65 mm","Maximum Drain Source Voltage":"50 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"12 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"15 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"560 pF @ 25 V","Length":"10.51...
1874 Bytes - 17:24:14, 23 December 2024

Documentation and Support

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