Product Datasheet Search Results:
- IRFY130CMSCX
- International Rectifier
- 14.4 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
- IRFY130CMSCXPBF
- International Rectifier
- 14.4 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
Product Details Search Results:
Irf.com/IRFY130CMSCX
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"69 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"57.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1474 Bytes - 20:51:23, 25 November 2024
Irf.com/IRFY130CMSCXPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"69 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"57.6 A","Channel Type":"N-CHANNEL","FET ...
1539 Bytes - 20:51:23, 25 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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IRFY130.pdf | 0.16 | 1 | Request |