Product Datasheet Search Results:

IRFR9024NC.pdf11 Pages, 1351 KB, Original
IRFR9024NC
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCPBF.pdf10 Pages, 1343 KB, Original
IRFR9024NCTR.pdf11 Pages, 1351 KB, Original
IRFR9024NCTR
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCTRL.pdf11 Pages, 1351 KB, Original
IRFR9024NCTRL
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCTRLPBF.pdf11 Pages, 1351 KB, Original
IRFR9024NCTRLPBF
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCTRPBF.pdf11 Pages, 1351 KB, Original
IRFR9024NCTRPBF
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCTRR.pdf11 Pages, 1351 KB, Original
IRFR9024NCTRR
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR9024NCTRRPBF.pdf11 Pages, 1351 KB, Original
IRFR9024NCTRRPBF
International Rectifier
11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

Product Details Search Results:

Irf.com/IRFR9024NC
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1525 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1537 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1543 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-...
1633 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-...
1627 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1543 Bytes - 04:57:20, 17 November 2024
Irf.com/IRFR9024NCTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-...
1635 Bytes - 04:57:20, 17 November 2024

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