Product Datasheet Search Results:

IRFP254.pdf6 Pages, 155 KB, Original
IRFP254A.pdf7 Pages, 236 KB, Original
IRFP254B.pdf8 Pages, 669 KB, Original
IRFP254B_FP001.pdf8 Pages, 669 KB, Original
IRFP254B_FP001
Fairchild Semiconductor
250V N-Channel B-FET / Substitute of IRFP254 & IRFP254A
IRFP254.pdf5 Pages, 194 KB, Scan
IRFP254
Harris Semiconductor
Power MOSFET Data Book 1990
IRFP254.pdf6 Pages, 163 KB, Scan
IRFP254A.pdf7 Pages, 236 KB, Original
IRFP254N.pdf8 Pages, 170 KB, Original
IRFP254NPBF.pdf8 Pages, 170 KB, Original
IRFP254NPBF
International Rectifier
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP254PBF.pdf6 Pages, 163 KB, Scan
IRFP254PBF
International Rectifier
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP254.pdf2 Pages, 47 KB, Original
IRFP254
Ixys Corporation
TRANS MOSFET N-CH 250V 23A 3TO-247 AD

Product Details Search Results:

Harris.com/IRFP254R
{"C(iss) Max. (F)":"2.7n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"250","g(fs) Max, (S) Trans. conduct,":"17","I(D) Abs. Max.(A) Drain Curr.":"15","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":"140m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"92","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"11","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"13","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th ...
1313 Bytes - 01:58:24, 17 November 2024
Vishay.com/IRFP254
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"140 mOhm @ 14A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP254","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP254","Power - Max":"190W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"250...
1558 Bytes - 01:58:24, 17 November 2024
Vishay.com/IRFP254NPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2040pF @ 25V","Series":"-","Standard Package":"25","Supplier Device Package":"TO-247-3","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Datasheets":"IRFP254N,SiHFP254N","Rds On (Max) @ Id, Vgs":"125 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"220W","Pac...
1653 Bytes - 01:58:24, 17 November 2024
Vishay.com/IRFP254PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"23A (Tc)","Gate Charge (Qg) @ Vgs":"140nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"140 mOhm @ 14A, 10V","Datasheets":"IRFP254","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Drain to Source Voltage (Vdss)":"250V","Online Catalo...
1737 Bytes - 01:58:24, 17 November 2024
Vishay_pcs/IRFP254PBF
{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"23 A","Width":"5.31 mm","Maximum Drain Source Voltage":"250 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 140 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"15 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2700 pF @ 25 V","...
1935 Bytes - 01:58:24, 17 November 2024
Zilog.com/IRFP254
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"23 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"92 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1468 Bytes - 01:58:24, 17 November 2024

Documentation and Support

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