Product Datasheet Search Results:

IRF9640.pdf7 Pages, 105 KB, Original
IRF9640
Fairchild Semiconductor
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
IRF9640.pdf19 Pages, 625 KB, Original
IRF9640
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRF9640.pdf5 Pages, 204 KB, Scan
IRF9640
Harris Semiconductor
Power MOSFET Data Book 1990
IRF9640.pdf7 Pages, 64 KB, Original
IRF9640
Intersil Corporation
11A, 200V, 0.500 ?, P-Channel Power MOSFETs
IRF9640.pdf1 Pages, 44 KB, Original
IRF9640
International Rectifier
TO-220 / TO-247 HEXFET Power MOSFETs
IRF9640PBF.pdf6 Pages, 171 KB, Scan
IRF9640PBF
International Rectifier
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
IRF9640S.pdf6 Pages, 171 KB, Scan
IRF9640S
International Rectifier
HEXFET Power MOSFET
IRF9640SPBF.pdf6 Pages, 171 KB, Scan
IRF9640SPBF
International Rectifier
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
IRF9640STRL.pdf6 Pages, 171 KB, Scan
IRF9640STRL
International Rectifier
P-channel MOSFET for fast switching applications, 200V, 11A
IRF9640STRR.pdf6 Pages, 171 KB, Scan
IRF9640STRR
International Rectifier
P-channel MOSFET for fast switching applications, 200V, 11A
IRF9640.pdf2 Pages, 91 KB, Scan
IRF9640
N/a
FET Data Book
IRF9640L.pdf1 Pages, 39 KB, Original
IRF9640L
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF9640S.pdf1 Pages, 39 KB, Original
IRF9640S
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF9640STRL.pdf1 Pages, 39 KB, Original
IRF9640STRL
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF9640STRR.pdf1 Pages, 39 KB, Original
IRF9640STRR
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF9640.pdf12 Pages, 509 KB, Scan
IRF9640
Samsung Electronics
200 V, P-channel power MOSFET
IRF9640.pdf67 Pages, 163 KB, Original
IRF9640
Toshiba
Power MOSFETs Cross Reference Guide
IRF9640S.pdf67 Pages, 163 KB, Original
IRF9640S
Toshiba
Power MOSFETs Cross Reference Guide
IRF9640.pdf9 Pages, 199 KB, Original
IRF9640
Vishay [siliconix]
MOSFET P-CH 200V 11A TO-220AB - IRF9640
IRF9640-001.pdf1 Pages, 41 KB, Scan
IRF9640-001
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET
IRF9640-001PBF.pdf1 Pages, 41 KB, Scan
IRF9640-001PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET
IRF9640-002.pdf2 Pages, 68 KB, Scan
IRF9640-002
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-002PBF.pdf2 Pages, 68 KB, Scan
IRF9640-002PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-003.pdf2 Pages, 68 KB, Scan
IRF9640-003
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-003PBF.pdf2 Pages, 68 KB, Scan
IRF9640-003PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-004.pdf2 Pages, 68 KB, Scan
IRF9640-004
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-004PBF.pdf2 Pages, 68 KB, Scan
IRF9640-004PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-005PBF.pdf2 Pages, 68 KB, Scan
IRF9640-005PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-006.pdf2 Pages, 68 KB, Scan
IRF9640-006
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-006PBF.pdf2 Pages, 68 KB, Scan
IRF9640-006PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-007.pdf2 Pages, 68 KB, Scan
IRF9640-007
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-007PBF.pdf2 Pages, 68 KB, Scan
IRF9640-007PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-009.pdf1 Pages, 32 KB, Scan
IRF9640-009
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-009PBF.pdf1 Pages, 32 KB, Scan
IRF9640-009PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-010.pdf2 Pages, 68 KB, Scan
IRF9640-010
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-010PBF.pdf2 Pages, 68 KB, Scan
IRF9640-010PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-011.pdf2 Pages, 68 KB, Scan
IRF9640-011
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-011PBF.pdf2 Pages, 68 KB, Scan
IRF9640-011PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-012.pdf2 Pages, 68 KB, Scan
IRF9640-012
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-012PBF.pdf2 Pages, 68 KB, Scan
IRF9640-012PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-013.pdf2 Pages, 68 KB, Scan
IRF9640-013
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-013PBF.pdf2 Pages, 68 KB, Scan
IRF9640-013PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-015.pdf2 Pages, 68 KB, Scan
IRF9640-015
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-015PBF.pdf2 Pages, 68 KB, Scan
IRF9640-015PBF
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF9640-017.pdf2 Pages, 68 KB, Scan
IRF9640-017
Vishay Presicion Group
11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Siliconix_vishay/IRF9640
776 Bytes - 05:18:41, 20 September 2024
Siliconix_vishay/IRF9640PBF
794 Bytes - 05:18:41, 20 September 2024
Siliconix_vishay/IRF9640SPBF
800 Bytes - 05:18:41, 20 September 2024
Siliconix_vishay/IRF9640STRLPBF
786 Bytes - 05:18:41, 20 September 2024
Siliconix_vishay/IRF9640STRRPBF
787 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"500 mOhm @ 6.6A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRF9640","Packaging":"Tube","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"IRF9640 Packaging Information","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Drain to S...
1668 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"44 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"11 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...
1400 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1459 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-003
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1446 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-003PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-004
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1448 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-004PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-005PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-006
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1448 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-006PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-007
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1332 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-007PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configura...
1393 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-009
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1453 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-009PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-010
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-010PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-011
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-011PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-012
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1451 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-012PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1511 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-013
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-013PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-015
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-015PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1507 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-017
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1451 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-017PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1512 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-018
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1451 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-018PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-019
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-019PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-024
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1451 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-024PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-029
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1450 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-029PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-030
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1449 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-030PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-031
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1448 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640-031PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1513 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640F
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.5000 ohm","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Term...
1278 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640FPBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.5000 ohm","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGUL...
1340 Bytes - 05:18:41, 20 September 2024
Vishay.com/IRF9640FX
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"P-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.5000 ohm","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Term...
1284 Bytes - 05:18:41, 20 September 2024