Product Datasheet Search Results:

IRF9240.pdf5 Pages, 196 KB, Scan
IRF9240
Harris Semiconductor
Power MOSFET Data Book 1990
IRF9240.pdf7 Pages, 63 KB, Original
IRF9240
Intersil Corporation
-11A, -200V, 0.500 ?, P-Channel Power MOSFET
IRF9240.pdf7 Pages, 147 KB, Original
IRF9240
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240E.pdf92 Pages, 2885 KB, Scan
IRF9240E
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EA.pdf92 Pages, 2885 KB, Scan
IRF9240EA
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EAPBF.pdf92 Pages, 2885 KB, Scan
IRF9240EAPBF
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EB.pdf92 Pages, 2885 KB, Scan
IRF9240EB
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EBPBF.pdf92 Pages, 2885 KB, Scan
IRF9240EBPBF
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EC.pdf92 Pages, 2885 KB, Scan
IRF9240EC
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240ECPBF.pdf92 Pages, 2885 KB, Scan
IRF9240ECPBF
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240ED.pdf92 Pages, 2885 KB, Scan
IRF9240ED
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9240EDPBF.pdf92 Pages, 2885 KB, Scan
IRF9240EDPBF
International Rectifier
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF9240
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1491 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1428 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1433 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1501 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1434 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1503 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1436 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1499 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1434 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1503 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1495 Bytes - 17:36:38, 28 September 2024
Irf.com/IRF9240PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"M...
1559 Bytes - 17:36:38, 28 September 2024