Product Datasheet Search Results:

IRF840S.pdf4 Pages, 96 KB, Original
IRF840S
Advanced Power Electronics Corp. Usa
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
IRF840S.pdf6 Pages, 152 KB, Original
IRF840S.pdf6 Pages, 172 KB, Scan
IRF840SPBF.pdf9 Pages, 687 KB, Original
IRF840STRL.pdf6 Pages, 172 KB, Scan
IRF840STRL
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF840STRR.pdf6 Pages, 172 KB, Scan
IRF840STRR
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
IRF840S.pdf1 Pages, 37 KB, Original
IRF840S
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF840STRL.pdf1 Pages, 37 KB, Original
IRF840STRL
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF840STRR.pdf1 Pages, 37 KB, Original
IRF840STRR
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRF840S.pdf67 Pages, 163 KB, Original
IRF840S
Toshiba
Power MOSFETs Cross Reference Guide
IRF840S.pdf1 Pages, 143 KB, Original

Product Details Search Results:

A-power.com.tw/IRF840S
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tr...
1498 Bytes - 05:30:28, 17 November 2024
Siliconix_vishay/IRF840SPBF
795 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1300pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","M...
1559 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840SPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1300pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package / Case":"TO-263-...
1738 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840STR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1519 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drai...
1571 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840STRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drai...
1588 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840STRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drai...
1570 Bytes - 05:30:28, 17 November 2024
Vishay.com/IRF840STRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840S, SiHF840S","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drai...
1589 Bytes - 05:30:28, 17 November 2024

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