Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"8A (Tc)","Gate Charge (Qg) @ Vgs":"38nC @ 10V","Product Photos":"TO-220AB","PCN Assembly/Origin":"SIL-099-2014-Rev-0 12/Nov/2014","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","Datasheets":"IRF840APBF Packaging Information","FET Type":"MOSFET N-Channel, Meta...

{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49\n \n mm","Maximum Continuous Drain Current":"8\n \n A","Width":"4.65\n \n mm","Maximum Drain Source Voltage":"500\n \n V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150\n \n \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 38 nC @ 10 V","Operating Temperature Range":"-55 to +150\n \n \u00b0C","Typical Turn On Delay Time":"11\n \n ns","Channel Type":"N","Typical Input Capa...