Product Datasheet Search Results:
11 Pages, 248 KB, Original- IRF634NS
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 221 KB, Original- IRF634NSPBF
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 248 KB, Original- IRF634NSTRL
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 248 KB, Original- IRF634NSTRR
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 127 KB, Original- IRF634NSPBF
- Vishay [siliconix]
- MOSFET N-CH 250V 8A D2PAK - IRF634NSPBF
12 Pages, 270 KB, Original- IRF634NSTRL
- Vishay Presicion Group
- 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Vishay.com/IRF634NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF634N(NS,NL)PBF","Rds On (Max) @ Id, Vgs":"435 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mo...
1627 Bytes - 00:40:06, 15 November 2024
Vishay.com/IRF634NSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4350 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1531 Bytes - 00:40:06, 15 November 2024
