Product Datasheet Search Results:

IRF623.pdf5 Pages, 166 KB, Scan
IRF623
Fairchild Semiconductor
N-Channel Power MOSFETs, 7A, 150-200V
IRF623.pdf4 Pages, 200 KB, Original
IRF623.pdf4 Pages, 200 KB, Original
IRF623
Frederick Components
Power MOSFET Selection Guide
IRF623.pdf1 Pages, 37 KB, Scan
IRF623
Motorola
European Master Selection Guide 1986
IRF623.pdf5 Pages, 161 KB, Scan
IRF623
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A.
IRF623.pdf2 Pages, 125 KB, Scan
IRF623
General Electric
Power Transistor Data Book 1985
IRF623.pdf5 Pages, 170 KB, Scan
IRF623
Harris Semiconductor
Power MOSFET Data Book 1990
IRF623R.pdf5 Pages, 184 KB, Scan
IRF623R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF623.pdf1 Pages, 42 KB, Scan
IRF623
International Rectifier
4.3 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF623PBF.pdf1 Pages, 42 KB, Scan
IRF623PBF
International Rectifier
4.3 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF623R.pdf1 Pages, 41 KB, Original
IRF623R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF623.pdf6 Pages, 341 KB, Scan
IRF623
N/a
FET Data Book

Product Details Search Results:

Irf.com/IRF623
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"17 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SI...
1336 Bytes - 14:18:46, 22 December 2024
Irf.com/IRF623PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"17 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1411 Bytes - 14:18:46, 22 December 2024
Semelab.co.uk/IRF623
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source ...
1300 Bytes - 14:18:46, 22 December 2024
St.com/IRF623FI
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"30","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"1.0m","t(r) Max. (s) Rise time":"60n","V(BR)DSS (V)":"150","t(f) Max. (s) Fall time.":"60n","@I(D) (A) (Test Condition)":"2.5","I(D) Abs. Drain Current (A)":"3.5","Package":"TO-220AB","Military":"N","g(fs) Min. (S) Trans. conduct.":"1.3","r(DS)on Max. (Ohms)":"1.2"}...
857 Bytes - 14:18:46, 22 December 2024
Various/IRF623R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"40","g(fs) Max, (S) Trans. conduct,":"2.5","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"1.2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1295 Bytes - 14:18:46, 22 December 2024

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