Product Datasheet Search Results:

IRF440E.pdf92 Pages, 2885 KB, Scan
IRF440E
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EA.pdf92 Pages, 2885 KB, Scan
IRF440EA
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EAPBF.pdf92 Pages, 2885 KB, Scan
IRF440EAPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EB.pdf92 Pages, 2885 KB, Scan
IRF440EB
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EBPBF.pdf92 Pages, 2885 KB, Scan
IRF440EBPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EC.pdf92 Pages, 2885 KB, Scan
IRF440EC
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440ECPBF.pdf92 Pages, 2885 KB, Scan
IRF440ECPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440ED.pdf92 Pages, 2885 KB, Scan
IRF440ED
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EDPBF.pdf92 Pages, 2885 KB, Scan
IRF440EDPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF440EPBF.pdf92 Pages, 2885 KB, Scan
IRF440EPBF
International Rectifier
8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF440E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1420 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1493 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1428 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1495 Bytes - 13:51:00, 15 November 2024
Irf.com/IRF440EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"3.6 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1489 Bytes - 13:51:00, 15 November 2024

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